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100 times faster than the development of carbon transistor beyond the new speed amorphous silicon RFID components, semiconductors, transistors, carbon – Printing
At room temperature semiconductor device manufacturing technology, as electronic bulletin board (electronicbillboards) that large-scale applications, and RFID tags can be uses disposable ultra-low cost as possible. But most of the transistors at room temperature electron mobility is very low, only one percent digital volt cm ^ sec (cm2/Vs).
Now, Georgia Institute of Technology (Georgia Institute ofTechnology, Georgia Tech) Researchers say that by using carbon-60 (C60) film is ball Buck (buckyballs) or fullerenes (fullerenes) to make transistors (transistor) channel (channel), which is a ratio of amorphous silicon can be produced (amorphous) at room temperature to 100 times faster manufacturing methods transistors.
"We do not claim to be the first to manufacture transistors on the C60 in the laboratory ambient temperature," said Professor GeorgiaTech BernardKippelen: "The innovation of our R & D is to demonstrate that the process at room temperature and obtained a 3 ~ 5cm2 / Vs electron mobility high, but may also obtain a good stability renewable (reproducibility), and low threshold voltage and switching high current ratio (ratio in offcurrent). "
global research laboratory at room temperature in process technology to take advantage of cheap, high-performance disaster Yao sword? Oll technology-to-roll) printing ink jet printing or to create large displays and low-cost applications such as RFID products, thus you do not need those expensive cleanroom, the transformation of high temperature. But there are many ways to try to use organic materials for transistors, but also tried to use the formula for finding new materials to improve the electronic mobility in the channel.
Other research units have achieved greater that the electron mobility GeorgiaTech study group but mainly through the high temperature process? Manufactured with transistors. Although the U.S. industry has developed Kovi ink inorganic silicon (inorganicsiliconink), can be manufactured by means of thin-film transistors inkjet printing, but? Temperature process is much higher than the plastic substrate could afford.
Despite GeorgiaTech R & D results, which do not reach the high-temperature process can achieve the electron mobility (Kovi says its electron mobility and polysilicon as good), they achieve the electron mobility than amorphous silicon has been cited. Applications potential of technology as a means of production requires only 16 ms refresh rate (refresh) the service displays (display services) but can use low-cost plastic substrates.
Design improvements in recent years, based on Kippelen says his research team has identified the need for low temperature high electron mobility to optimize the materials and parameters: "Our research is based on the development of semiconductor organic (purification) and treatment based on several years of experience. while the gate dielectric (gatedielectric) and the choice of electrode metal, but also play an important role. "
Georgia Tech Professor Bernard Kippelen (center) at room temperature in research and development projects the transistor, and a research scientist with the school BenoitDomercq and Zhang Xiao-Kong, a PhD student to work together.
The reasons of convenience, GeorgiaTech equipment component of the model is manufactured on silicon substrate, but researchers said the use of organic transistors C60 all the elements are made at room environment. The transistors used for the metal electrode at room temperature, is used with the plastics used in OLED and transparent solar cells? Camino (transparentprocess) statement the same technology.
"Our electrode is the use of masks (shadow mask) and thermal evaporation (thermalevaporation) process, at the top made of organic semiconductors, "Kippelen said:" Through the power metal (source) and between the substrate a sufficient distance (3 feet), allows the substrate is not regarded as overheating deposition process. "
Here, researchers explore the manufacturing channel n and p-channel transistor means, to take advantage of room temperature organic materials, manufacture of active matrix displays CMOS investors (investors) ring oscillator (ringoscillator) logic gate circuit and the auxiliary unit, etc.. "Replace the silicon with plastic floor boards, but also us the future research project, "Kippelen said.
However, manufacturing channel transistors using C60 or disadvantage exists ie, which are sensitive to oxygen, means that components must work in an environment where nitrogen. The researchers are planning to return to form a fullerene molecule, in the form of vacuum components to address the issue. About the Author
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